Broadband dielectric microwave microscopy on micron length scales.

We demonstrate that a near-field microwave microscope based on a transmission line resonator allows imaging in a substantially wide range of frequencies, so that the microscope properties approach those of a spatially resolved impedance analyzer. In the case of an electric probe, the broadband imaging can be used in a direct fashion to separate contributions from capacitive and resistive properties of a sample at length scales on the order of one micron. Using a microwave near-field microscope based on a transmission line resonator we imaged the local dielectric properties of a focused ion beam milled structure on a high-dielectric-constant Ba(0.6)Sr(0.4)TiO(3) thin film in the frequency range from 1.3 to 17.4 GHz. The electrostatic approximation breaks down already at frequencies above approximately 10 GHz for the probe geometry used, and a full-wave analysis is necessary to obtain qualitative information from the images.